Wafer Services

As a manufacturer of integrated circuits, QuickSil understands the requirement for high quality wafers, fast turn times, and process cleanliness when providing service work.

QuickSil offers the following quick turn services:

Silane based PECVD SiO2:

This glass is deposited in a Novellus Concept 1 PECVD Reactor. The standard product exhibits low stress (slightly compressive) low particulate and excellent uniformity. This standard service covers the following wafers sizes: 100, 125, and 150 mm diameter wafers, thickness up to 8 microns.

PECVD Silicon Nitride:

This glass is deposited in a Novellus Concept 1 PECVD Reactor. The standard product exhibits low stress (slightly tensile), low particulate and excellent uniformity. This standard service covers the following requirements: 100, 125, 150 mm diameter wafers, thickness up to 4 microns. Note: Oxynitride and Silicon Carbide are also available.

Metal Deposition:

QuickSil uses Varian 3190 sputtering systems. Each machine utilizes an RF etch station and three s-guns. Temperatures up to 400C are available at each station. Metals offered are for 125 mm diameter wafers only. Ti/W, Al, AlSi, AlCu.

QuickSil has Gold evaporation capability (Au and AuAs) which is generally used for Backside processing of wafers prior to assembly.

Laser Mark:

QuickSil offers laser mark services and has invested significant time and effort into reducing any contamination introduced during this procedure: 100 and 125 mm.

LPCVD Polysilicon:

100 and 125 mm diameter wafers.

LPCVD Silicon Nitride:

100 and 125 mm diameter wafers.

The following services are for 125 mm wafers only:

Photomasking Operations (process uses positive photoresist only). Printing executed with the following tools : Ultratech UT1000WF, Canon PLA.

Reactive Ion Etching (RIE) using Tegal 903E and 901E reactors for etching: Si02 films, Si3N4 films, polysilicon and organic films.