QuickSil Incorporated
45738 Northport Loop W.
Fremont, CA 94538-6476
Phone: (510) 580-4820
Fax: (510) 580-4822
sales@quicksil.com


Photodiodes

QSPIN PIN photodiodes offer the lowest dark current available with leakage currents below 6 pA/mm2 at full depletion at 25°C.  Built on high resistivity float zone silicon (FZN) substrates,  QSPIN  photodiodes are designed for backside or frontside illumination applications ranging from Auger gamma camera spectroscopy to x-ray fluorescence detector heads. The deep depletion zone design results in  low detector capacitances, while a proven process technology and ultrapure float zone silicon yield ultra-low noise currents.

Features

  • Ultra low dark current
  • Low capacitance
  • Backside or frontside illuminated
  • Tileable architecture

Applications

  • Gamma camera detectors
  • Nuclear medicine
  • X-ray spectroscopy
  • X-ray computed tomography
  • XRF analyzers
  • Explosives detection systems (EDS)
  • Astrophysics
  QSPINP1 Layout QSPINP2 Layout

Electrical and Dimensional Specifications


Part Number

Wafer Thickness

Effective Active Area

Die Stepping Distance
XSTEP x YSTEP

Dark Current[2]
ID

Junction Capacitance[2]
CJ

Reach Through Voltage[3]
VRT

Maximum Reverse Voltage
VRMAX

(microns)

(mm2)

(mm x mm)

(pA)

(pF)

(V)

(V)

QSPINP1

400

5.0

4.5 x 4.5

31

2.0

40

80

QSPINP2

625

12.9

6.0 x 6.0

130

1.7

80

120

Notes:

  1. All measurements at 25°C unless otherwise specified. 1
  2. Biased at reach through voltage
  3. Maximum voltage required to fully deplete the substrate

QSPIN photodiodes are also offered in custom single or multi-pixel layouts suitable for tiling in large detector arrays. Please contact the factory at sales@quicksil.com  for samples or more information.