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QuickSil and Prototype Solutions have worked together to offer two additional variations of the nC1000 MCM-D technology
The advantages of enabling the interconnect to be determined by laser programming include the use of one set of tooling (used to
define the patterns on the substrates) for many designs. This reduces substantially the cost of substrates required for short
production runs.
QS1020 Laser programmable two level metal interconnect
The QS1020 technology allows the manufacture MCM substrates using regular
interconnect patterns where the interconnects can be programmed using fusible links. These links can be shorted by a non critical
laser pulse to form reliable low resistance paths. This allows laser programming to result in the required interconnects of the
base MCM. The use of alternate metallization schemes to form the device pads is an option to improve the flexibility of these
substrates.
The base QS1020 technology is as follows:
Silicon Substrate (125 mm diameter)
2 microns SiO2
2 microns M1 (Aluminum)
1.5 microns SiO2 Interlayer Dielectric
2 microns M2 (Aluminum)
1 micron SiO2 Passivation
QS1030 Laser programmable two level metal interconnect
The QS1030 technology is an extension of the QS1020 technology allowing the use of integrated capacitance, decoupled power, and
ground planes. These planes are selected by shorting the laser programmable links at the same time as laser
routing of the M1/M2 interconnect.
The base QS1030 technology is as follows:
Silicon Substrate (125 mm diameter)
0.8 microns SiO2
1 micron M1 (Aluminum)
Grow Alumina (Al2O3) Dielectric to give 50 nF/cm^2
1 micron M2 (Aluminum)
7 microns SiO2
2 microns M3 (Aluminum)
1.5 microns SiO2 Interlayer Dielectric.
2 microns M4 (Aluminum)
1 micron SiO2 Passivation
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